发明名称 STATIC ELECTRICITY PROTECTING CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To reduce the breakdown voltage of a static electricity protection circuit. SOLUTION: The collector of a transistor Q1 is connected to a terminal T1, the base and emitter are connected to a terminal T2, the collector of a transistor Q2 is connected to the terminal T1, the emitter is connected to the terminal T2, the base is connected to the terminal T2 via a resistor R, static electricity with one polarity is clamped by a diode between the base and collector of the transistor Q1, and static electricity with the other polarity is clamped between the collector and emitter of the transistor Q2.
申请公布号 JP2000183288(A) 申请公布日期 2000.06.30
申请号 JP19980360257 申请日期 1998.12.18
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 ICHINO HARUHIKO;MIZUSAWA TAKESHI
分类号 H01L27/04;H01L21/822;H01L27/06;(IPC1-7):H01L27/04 主分类号 H01L27/04
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