| 摘要 |
PROBLEM TO BE SOLVED: To remove obstacle during metallic wiring formation by reducing an unnecessary sidewall film on an isolation film generated by division formation of a gate electrode. SOLUTION: A height h2 of a gate electrode 11 on an isolation film 6 is made smaller than a height h1 of the gate electrode 11 on an element formation region by leaving a first silicon layer 3 in an element formation region without removing it. Since the gate electrode 11 on an element formation region comprises a lamination film of first and second silicon layers 3, 8 and a WSix film 9, and the gate electrode 11 on the isolation film 6 comprises the first silicon layer 3 and the WSix film 9, resulting in the relation h2<h1. Therefore, it is possible to make a sidewall film 14 on the isolation film 6 small during formation of a sidewall spacer film 13 of an N-channel transistor.
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