发明名称 FORMING METHOD OF FILM AND MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To restrain a film from increasing in carbon compound content by a method wherein raw material that contains organic metal is dissolved in a non-polar solvent, the solvent that contains raw material is vaporized or liquidized and introduced into a reaction chamber, and a chemical reaction is made to occur for the formation of a film on a substrate. SOLUTION: A solution tank 8 is composed of a Ba-containing solution tank, an Sr-contsaining solution tank, and a Ti-containing tank, where materials Ba, Sr, and Ti are each dissolved into non-polar solvents for the preparation of toluene solutions, and the toluene solutions are each kept in the above tanks. When a film is formed by the reaction of raw material, non-polar solvent is hardly possessed of organic molecular groups of large molecular weight which coordinate around organic metal through an electric interaction with organic metal like the polar group of a polar solvent. Therefore, when a non-polar solvent is used, carbon compound introduced into a film is reduced in amount, so that carbon compound or solvent molecules introduced into a film to serve as movable ions can be lessened in content.
申请公布号 JP2000183057(A) 申请公布日期 2000.06.30
申请号 JP19990279096 申请日期 1999.09.30
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 OTSUKA TAKASHI;UEDA MICHIHITO
分类号 H01G4/33;C23C16/40;H01L21/316;H01L21/8242;H01L27/108;(IPC1-7):H01L21/316;H01L21/824 主分类号 H01G4/33
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