CMOS TRANSISTOR OF SPLIT GATE STRUCTURE USING OXYNITRIDE AND MANUFACTURING METHOD THEREOF,申请号KR1019980007059-传众专利搜索

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发明名称	CMOS TRANSISTOR OF SPLIT GATE STRUCTURE USING OXYNITRIDE AND MANUFACTURING METHOD THEREOF
摘要
申请公布号	KR100282984(B1)	申请公布日期	2000.12.04
申请号	KR1019980007059	申请日期	1998.03.04
申请人		发明人
分类号		主分类号
代理机构		代理人
主权项
地址

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