| 摘要 |
PROBLEM TO BE SOLVED: To enable forming a light radiating end face of a semiconductor light-emitting element, using a nitride III-V compound semiconductor by cleavage, without having to use an expensive substrate such as an SiC substrate or the like, to enable fetching of an electrode from both upper and lower surfaces and to eliminate faults in operation. SOLUTION: A method for forming the end face of a semiconductor layer comprises the steps of laminating GaN semiconductor layers in a multiplayer manner on a C-plane sapphire board 1 to form a laser structure, and then forming an Ni/Au film 7 thereon. The method further comprises the step of forming an Ni/Au/In film 9 on a p-type GaP substrate 8 of a plane orientation (100). The method also comprises the steps of connecting the GaN semiconductor layer on the board 1 to the substrate 8 via the film 7 and the film 9, so that easy directions of cleavage for the semiconductor layer and the substrate coincide, then removing the board 1, cleaving the substrate 8 along the its easy direction of cleavage, thereby cleaving the semiconductor layer to form the end face of a resonator.
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