| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device incorporating a high resistance resistor element, having a high breakdown voltage. SOLUTION: A drive power IC has a drive circuit, comprising a main switch(MS) transistor, a starter switch(SS) for starting the MS transistor and a starting resistor (resistor element) SR provided on a field insulation film. A field-limiting ring(FLR) is provided on the surface of a semiconductor substrate beneath the peripheral region, i.e., the field insulation film, of an IC chip, while enclosing an active region multiple number of times. The resistor element extends from the starting end on the inside of an FLR group to the end on the outside thereof, while meandering. Potential at each part of a resistor element on a straight line connecting the starting end and the end of the resistor element is identical or approximate to the potential at each part of on the surface of the semiconductor substrate, corresponding to a straight line connecting the starting end and the end.
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