| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device capable of reducing a diffusing unevenness and a removing residue of an impurity by stably and uniformly forming a silicate glass layer by optimizing heat treating conditions in a predeposition. SOLUTION: The method for manufacturing the semiconductor device comprises the steps of introducing the impurity into a semiconductor substrate while depositing a layer to become an impurity diffusion source on a surface of the substrate, and then heat treating the substrate for a sufficient time to stabilize a quality of the deposited layer to become the impurity diffusion source.
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