发明名称 Semiconductor device and method for manufacturing the same
摘要 A semiconductor device includes a semiconductor substrate on which an element is formed, a lower wiring formed on the semiconductor substrate, and an upper wiring formed on and connected to the lower wiring. The upper wiring includes a plurality of regions having different thicknesses in a continuous wiring region excluding a connection region for connecting the upper and lower wirings.
申请公布号 US6331734(B1) 申请公布日期 2001.12.18
申请号 US19990383961 申请日期 1999.08.27
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 HIEDA KATSUHIKO
分类号 H01L21/3205;H01L21/768;H01L21/8242;H01L23/522;H01L23/528;(IPC1-7):H01L23/485 主分类号 H01L21/3205
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