POWER MOSFET AND METHODS OF FORMING AND OPERATING THE SAME

摘要

In power MOSFET embodiments of the present invention which provide highly linear transfer characteristics and can be used effectively in linear power amplifiers a relatively highly doped transition region (117) is preferably provided between the channel region (116) and the drift region (112). Upon depletion, this transition region provides a potential barrier that supports separate and simultaneous linear and current saturation modes.