| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a double-gate integrated circuit and its structure. SOLUTION: The method includes a step for forming a laminated structure, having a channel layer and first insulation layers provided on the respective side surface of the channel layer, a step for forming an opening in the laminated structure, a step for forming source and drain regions in the opening, a step for removing a portion of the laminated structure for leaving a first portion of the channel layer exposed to the external, a step for forming a first gate dielectric layer in the channel layer, a step for forming a first gate electrode in the first gate dielectric layer, a step for removing a portion of the laminated structure to leave a second portion of the channel layer exposed to the external, a step for forming a second gate dielectric layer in the channel layer, a step for forming a second gate electrode in the second gate dielectric layer, and a step for doping the source and drain regions through self-aligned ion implantation. In this case, the first and second gate electrodes are formed independently of each other.
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