| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to improve a standby current characteristic, by freely controlling the length of a low density impurity region within the scope of a current specification while a shallow junction is formed in the low density impurity region of a cell region. CONSTITUTION: A peripheral region and a cell region are defined in a semiconductor substrate(301). The first and second gate electrodes are formed on the semiconductor substrate having the peripheral region and the cell region by interposing a gate insulation layer(302). The first high-density source/drain region is formed in the semiconductor substrate at both sides of the first gate electrode in the peripheral region, separated from the first gate electrode by the first interval. The second high-density source/drain region is formed in the semiconductor substrate at both sides of the second gate electrode in the cell region, separated from the second gate electrode by the second interval longer than the first interval. A low density source/drain region having a predetermined depth is formed in the semiconductor substrate between the first/second gate electrodes and the first/second high density source/drain regions. A silicide layer(310) is formed on the first and second gate electrodes and the first and second high density source/drain region.
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