| 摘要 |
PROBLEM TO BE SOLVED: To form a light outputting hole (114) in a contact layer (108) in a surface emitting semiconductor laser, and form the contact layer (108) of GaAs in this constitution. SOLUTION: By forming the light outputting hole (114), the greater part of a laser light is outputted from the hole (114), so that light absorption due to the contact layer (108) can be reduced. As a result, superior output intensity can be obtained. The contact layer (108) may be formed of GaAs whose light absorption coefficient is large, so that the contact layer (108) can be obtained wherein resistance is very small, oxidation is hard to be generated, and a temperature in the case of alloying is very low.
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