| 摘要 |
PROBLEM TO BE SOLVED: To prevent the effect of contamination in an LP-CVD process conducted, after a processing using heavy metals. SOLUTION: Before conducting a processing using heavy metals, an insulating film is formed on the bottom surface side of a structure that will later become a semiconductor device. After the processing using heavy metal has been finished, the heavy metals attached to the surface of the insulating film are removed.
|
