| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for relieving defective surface stresses in a semiconductor substrate, without newly generating thermal distortion and defects on the semiconductor substrate, and for reducing crystal defects. SOLUTION: In this method for relieving the defective surface stresses generated in a semiconductor device in a semiconductor device manufacture process, plasma is generated, a positive voltage is applied to the semiconductor substrate (2), and electrons (5) are selectively irradiated from the plasma.
|
