TEMPERATURE MEASURING METHOD AND SUBSTRATE FOR TEMPERATURE MEASUREMENT USED FOR THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method for measuring the actual temperature and temperature distribution of a semiconductor substrate without any error exposed by a heat device and the substrate for temperature measurement used therefore in the comparatively low temperature heat device such as the plasma heat device. SOLUTION: A wafer 10 for temperature measurement before film formation is composed of a first semiconductor layer 11a consisting of a mono-crystal silicon, a second semiconductor layer 11b made amorphous thereon, and a protection film 12 consisting of silicon oxide thereon. After the wafer 10 for the temperature measurement is charged in a plasma CVD device, an FSG film 30 sedimented on the protection film 12 and the protection film 12 are removed by buffer hydrofluoric acid to expose the second semiconductor layer 11b. Thereafter the thickness t1 of the second semiconductor layer 11b in the substrate 10 for the temperature measurement is measured by a spectral ellipsometry device. Wafer temperature is found by the decrease rate per hour of the thickness t1.