| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor device that has improved element characteristics containing a nitride-based semiconductor layer with less crystal defects. SOLUTION: The nitride-based semiconductor device comprises a sapphire substrate 1 containing a first GaN layer 3 having a surface in an irregular shape, mask layers 4 and 5 that cover the irregular shape of the first GaN layer 3 and at the same time are formed to expose only one side surface of the irregular shape, a second GaN layer 6 that comes into contact with one exposed side surface and at the same time is formed on the mask layers 4 and 5, and nitride-based semiconductor element layers 7-12 that are formed on the second GaN layer 6 and have an element region.
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