| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which over-head of chip size caused when a synchronous DRAM is made a virtual channel is dissolved and chip size is reduced, and its arranged and wiring method. SOLUTION: This device is provided with a plurality of pairs of transfer buses 111 wired in parallel to the direction of bit line over an array part and a channel region and transferring an amplified signal of a sense amplifier to a channel buffer and VINT wiring 113 and GND wiring 112 for sense amplifier driving circuits wired alternately with the pairs of transfer buses, the channel region is provided with VCC power source wiring 115 and GND wiring 114 wired along the direction of word line of the array part, a plurality of driver transistors 120 are provided under a VCC power source wiring, the channel region is provided with first and second driver control signals 116, 117 deciding whether the transistor is made the driver outputting external power source (VCC) or made the driver outputting internal dropped power source voltage (VINT) by being connected to a control terminal of the transistor, and a VINT control circuit generating two kinds of driver control signals 116, 117 are provided in a peripheral circuit layout region.
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