| 摘要 |
A semiconductor thin film which is deposited by using a chemical vapor deposition method at an underlying layer temperature of 400° C. or less, and contains, as main component elements, a Group IV atom and hydrogen atom. A temperature dependency of an amount of release of hydrogen atoms within the film when the film is heated from room temperature exhibits a profile having a peak of the hydrogen releasing amount at 370° C. or higher and 410° C. or less, and a half-value width of the peak is 30° C. or less. Also disclosed is a thin film device having a semiconductor unit portion including this semiconductor thin film, and an electrode portion including an electrically conductive thin film, wherein these portions are formed on the same substrate. |
