发明名称 |
Multilayered CMP stop for flat planarization |
摘要 |
A three layer film (116/114/112), such as nitride/oxide/nitride for a CMP stop layer (110). A gap filling material (120) is polished, stopping on the first film (112). The first film (112) is then stripped using an etch chemistry that is selective against removing the second film (114). CMP is then continued stopping on the third film (116).
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申请公布号 |
US6805614(B2) |
申请公布日期 |
2004.10.19 |
申请号 |
US20010997882 |
申请日期 |
2001.11.30 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
KWOK SIANG PING |
分类号 |
B24B7/22;H01L21/311;H01L21/76;H01L21/762;(IPC1-7):B24B7/22 |
主分类号 |
B24B7/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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