发明名称 |
PLASMA APPARATUS AND METHOD FOR MANUFACTURING SHIELDING PLATE THEREFOR |
摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for keeping high inductive coupling between a coil and plasma and lowering contaminants spattered from an insulating window. SOLUTION: This apparatus for generating high density plasma is provided with a process chamber having an insulating window positioned in a single plane, a coil 44 installed adjacently to the insulating window outside the process chamber and practically parallel to the single plane and a shielding plate 60 positioned between the coil 44 and the insulating window. The shielding plate 60 has a large number of openings and the openings are positioned between adjacent turns of the coil 44. Consequently, the yield of a semiconductor wafer is improved and the production cost is lowered. |
申请公布号 |
JP2000342958(A) |
申请公布日期 |
2000.12.12 |
申请号 |
JP20000107688 |
申请日期 |
2000.04.10 |
申请人 |
SAMSUNG ELECTRONICS CO LTD |
发明人 |
SHIN EUN-HEE;KIN CHINMAN;CHOI BAIK-SOON;SHA IN |
分类号 |
H05H1/46;B01J19/08;C23F4/00;H01J37/32;H01L21/205;H01L21/302;H01L21/3065 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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