发明名称 PLASMA APPARATUS AND METHOD FOR MANUFACTURING SHIELDING PLATE THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide an apparatus and a method for keeping high inductive coupling between a coil and plasma and lowering contaminants spattered from an insulating window. SOLUTION: This apparatus for generating high density plasma is provided with a process chamber having an insulating window positioned in a single plane, a coil 44 installed adjacently to the insulating window outside the process chamber and practically parallel to the single plane and a shielding plate 60 positioned between the coil 44 and the insulating window. The shielding plate 60 has a large number of openings and the openings are positioned between adjacent turns of the coil 44. Consequently, the yield of a semiconductor wafer is improved and the production cost is lowered.
申请公布号 JP2000342958(A) 申请公布日期 2000.12.12
申请号 JP20000107688 申请日期 2000.04.10
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 SHIN EUN-HEE;KIN CHINMAN;CHOI BAIK-SOON;SHA IN
分类号 H05H1/46;B01J19/08;C23F4/00;H01J37/32;H01L21/205;H01L21/302;H01L21/3065 主分类号 H05H1/46
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