发明名称 |
APPARATUS AND METHOD OF PURIFYING SILICON |
摘要 |
PROBLEM TO BE SOLVED: To provide a low cost apparatus for purifying silicon in which sufficient phosphorus (P) removing rate is attained with a simple and inexpensive apparatus structure and a method of purifying the silicon. SOLUTION: The silicon purifying apparatus is formed by installing at least a crucible for housing silicon and a heating apparatus for heating the crucible in a vacuum vessel equipped with a vacuum pump and an impurity condensation apparatus is arranged at a position where one or both of the surface of molten silicon in the crucible and the opening part of the crucible are observed. The silicon purifying method uses the apparatus. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005231956(A) |
申请公布日期 |
2005.09.02 |
申请号 |
JP20040044255 |
申请日期 |
2004.02.20 |
申请人 |
NIPPON STEEL CORP |
发明人 |
DONOMAE HITOSHI;TOKUMARU SHINJI;ITO NOBUAKI;OKAJIMA MASAKI |
分类号 |
C01B33/037;(IPC1-7):C01B33/037 |
主分类号 |
C01B33/037 |
代理机构 |
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地址 |
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