| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a crystalline silicon substrate having a higher carrier diffusion length, its manufacturing method, and a photoelectric conversion element employing it. <P>SOLUTION: In the crystalline silicon substrate, the combination mode is optimized between silicon and hydrogen is optimized and a hydrogen density profile in the silicon. In a spectrum showing a relation of desorption hydrogen speed to temperature measured by temperature rise desorption gas analysis for measuring the desorption hydrogen generated upon heating the substrate, the peak of desorption hydrogen speed is within a range of the substrate temperature higher than 600°C. Further, the maximum value of peak of the desorption hydrogen speed within the range of the substrate temperature higher than 700°C is larger than the maximum value of peak of the desorption hydrogen speed, within the range of the substrate temperature higher than 600°C and not higher than 700°C. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
