SEMICONDUCTOR PRODUCTION APPARATUS AND SEMICONDUCTOR DEVICE

摘要

A semiconductor production apparatus adapted to form metal thin-films (11,12) as metal electrodes on the front face and reverse face of silicon carbide semiconductor substrate (10) and thereafter conduct a rapid thermal treatment of heating the silicon carbide semiconductor substrate (10), wherein the silicon carbide semiconductor substrate (10) is held fast by holding structure (20) through contact with regions on the silicon carbide semiconductor substrate (10) outside those where the metal thin-films (11,12) are formed, and wherein the held silicon carbide semiconductor substrate (10) is disposed within a heating chamber of the semiconductor production apparatus.