| 摘要 |
<p>PURPOSE: Provided is an organic anti-reflection coating composition which forms an under coating to decrease an adverse effect of reflection from a background substrate in a photolithography process using various radiations. CONSTITUTION: The organic anti-reflection coating composition for an ArF photoresist is characterized by comprising the compound of the formula 1 as a light absorbing agent, wherein X is a hydrogen atom or methyl; and at least one of R1-R15 is hydroxy group and the others are independently or simultaneously hydrogen, halogen, nitro group, amino group, a C1-C3 alkyl group optionally having a hydroxy group, a C1-C3 alkoxy group optionally having a carbonyl group, benzene, or a C5-C6 cycloalkyl group.</p> |
