| 摘要 |
Use of a square planar transition metal complex as a dopant for doping an organic semiconductor matrix material, as charge injection layer, electrode material or as memory material in electronic or optoelectronic building element showing a square planar transition metal complex (I) or (II). Use of a square planar transition metal complex as a dopant for doping an organic semiconductor matrix material, as charge injection layer, electrode material or as memory material in electronic or optoelectronic building element showing a square planar transition metal complex of formula (I) or (II). M : a transition metal from groups 8-11 of the periodic table; X 1-X 4S, NR 5 or PR 5; R 5optionally substituted, (cyclo)alkyl, (hetero)aryl, condensed aromatic ring, donor group or acceptor group; R 1, R 2optionally substituted, aromatic, heteroaromatic, aliphatic hydrocarbons, cycloaliphatic hydrocarbons or nitrile; and L 1, L 2aromatic amine, aromatic phosphine, halo, pseudohalogen, isocyanate, thiocyanate or cyanate. Independent claims are included for: (1) an organic semiconductor material containing at least an organic matrix compound and a dopant (I) or (II); and (2) an electronic or optoelectronic building element containing an electronic functional effective area comprising (I) or (II). [Image]. |
