| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device which prevents the breakage of an internal circuit due to a surge current generated upon fuse cutting. <P>SOLUTION: The semiconductor integrated circuit device includes a semiconductor substrate, the inner circuit which is connected to a first potential and a second potential and is supplied with an operation voltage, the fuse interposed between a first wire connected to the second potential and a second wire connected to the internal circuit, and a protective element which protects the inner circuit in response to a positive or negative abnormal voltage generated at the second wire. The protective element is formed as a prescribed conductive well on the semiconductor substrate. Thus, the internal circuit is protected in response to the positive or negative abnormal voltage generated upon fuse cutting. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
