| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To detect accurately a memory cell having defect in a test stage in a nonvolatile semiconductor memory device. <P>SOLUTION: A test method of the nonvolatile semiconductor memory device has a (A) step for performing erasion of the memory cell with a FN system, and a (B) step for performing rewriting of the memory cell with the FN system after the (A) step. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
