| 摘要 |
A solar cell and a method for fabricating the same are provided to use an n+ type or p+ type amorphous silicon thin film as a lower electrode by selecting the dopant concentration of an n-type or p-type silicon thin film as high concentration. An uneven part(210) is formed on the surface of a substrate. An anti-reflection layer(220) is formed on the uneven part. An n+ type silicon thin film(230), a p- type silicon thin film(240) and a p+ type silicon thin film(250) are formed sequentially on the anti-reflection layer. A sidewall insulating layer(260) is formed on the n+ type silicon thin film, the p- type silicon thin film and the p+ silicon thin film, so as to prevent electrical connection between the n+ type silicon thin film and the p+ type silicon thin film. A metal wiring layer(270) is formed on the n+ type silicon thin film, the p- type silicon thin film, p+ type silicon thin film and the sidewall insulating layer, so as to connect the n+ type silicon thin film with the p+ silicon thin film. |
