发明名称 Integrated Circuit Comprising an Organic Semiconductor, and Method for the Production of an Integrated Circuit
摘要 An embodiment of the invention provides an integrated circuit having an organic field effect transistor (OFET) with a dielectric layer. The dielectric layer is prepared from a polymer formulation comprising: about 100 parts of at least one crosslinkable base polymer, from about 10 to about 20 parts of at least one di- or tribenzyl alcohol compound as an electrophilic crosslinking component, from about 0.2 to about 10 parts of at least one photo acid generator, and at least one solvent. Another embodiment provides a semiconductor fabrication method. The method comprises applying the polymer formulation to a surface of a substrate, drying the polymer formulation, crosslinking the polymer formulation after drying, and baking the polymer formulation after crosslinking.
申请公布号 US2008315192(A1) 申请公布日期 2008.12.25
申请号 US20080188966 申请日期 2008.08.08
申请人 HALIK MARCUS;KLAUK HAGEN;SCHMID GUENTER;WALTER ANDREAS;ZSCHIESCHANG UTE 发明人 HALIK MARCUS;KLAUK HAGEN;SCHMID GUENTER;WALTER ANDREAS;ZSCHIESCHANG UTE
分类号 H01L51/05;G03F1/90;H01B3/18;H01B3/44 主分类号 H01L51/05
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