发明名称 TEST WAFER
摘要 PROBLEM TO BE SOLVED: To provide a 300 mm test wafer, in which the evaluation of a performance data for a semiconductor manufacturing apparatus, and an evaluation apparatus, etc. is ensured, and the design specification inhibits layer peeling within a laser mark, and the damage to the surface is not produced after a CMP processing. SOLUTION: If a film is not attached to the interior of a dot of the laser mark 212, fundamentally, the film is not peeled. If the film is attached, a fixed restriction is prepared in the film structure as the specification. For example, even when a metal film of more than 100 nm thickness is laminated on the surface of the wafer, in the test wafer 100, etc. to which the laser mark 212 is attached for wafer identification, the 300 mm test wafer is produced in the design specification, in which the metal film of more than 150 nm thickness is not attached on the inside surface of the dot 213 of the laser mark 212. COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009004646(A) 申请公布日期 2009.01.08
申请号 JP20070165435 申请日期 2007.06.22
申请人 PHILTECH INC 发明人 FURUMURA YUJI;MURA NAOMI;NISHIHARA SHINJI
分类号 H01L21/02 主分类号 H01L21/02
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