| 摘要 |
PROBLEM TO BE SOLVED: To suppress the occurrence of wire bonding defects by providing an Al pad formed on a semiconductor substrate, an Au bump formed on the Al pad, and an Au wire to be connected to the Au bump. SOLUTION: An Al pad 3 is formed on a semiconductor substrate. Thereafter, an Au bump 5 is formed on the pad 3, or more specifically, the opening for the pad 3 by causing Au to precipitate and grow using a metal plating method. The bump 5 is formed during a wafer processing step. The bump 5 serves to connect an end of an Au wire 9 so that a semiconductor chip 1 is electrically connected to the leads of a package or to a board. Thereafter, the tip of the wire 9 inserted into a bonding tool 7 is heated, located above the bump 5, and lowered onto the bump 5. Then, the same tip is thermally compressed onto the bump 5 while biased by the tool 7. |
