| 摘要 |
<p>A method for manufacturing a phase change memory device is provided to cool down heat flowed into a phase change film through a heat sink layer by forming a heating absorbing film. A first interlayer insulating film(121) is formed on a semiconductor substrate(100), and the first contact hole exposing a switching device of a semiconductor board by etching the first interlayer insulating film. A second contact hole exposing a contact plug(171) formation area of the semiconductor substrate is formed. A silicide film(150) is formed on the surface of the second contact hole, and a switching element is formed within the first contact hole.</p> |
