| 摘要 |
PROBLEM TO BE SOLVED: To provide an insulating film which can be microfabricated easily, while having a high electron mobility.SOLUTION: A deposition method for forming a nitride film on a substrate in a processing container 12 includes an adsorption step for supplying a precursor gas containing silicon into the processing container 12, and adsorbing the molecules of precursor gas to the surface of the substrate, and a reaction step for generating plasma of reaction gas by supplying reaction gas containing nitrogen atoms and hydrogen atoms into the processing container 12, and supplying microwaves from an antenna 22a, and then performing plasma processing of the surface of a substrate to which the molecules of precursor gas are adsorbed, by means of the plasma thus generated.SELECTED DRAWING: Figure 1 |
