| 摘要 |
The method involves producing a substrate comprising semiconductor layers between which a third material layer i.e. sacrificial layer, is placed. Metal oxide semiconductor (MOS) transistor (140) e.g. P channel MOS transistor, whose active area is formed in a portion of one of the semiconductor layers, is formed. Another MOS transistor (172), whose active area is formed in a silicon portion (152) of another semiconductor layer, is formed. The active area of the latter MOS device is placed between a gate material (162) of the latter MOS transistor and the active area of the former transistor. |
