PHOTORESIST PATTERN TRIMMING COMPOSITIONS AND METHODS

摘要

Provided is a photoresist pattern trimming composition. The composition includes a matrix polymer, an aromatic sulfonic acid, and a solvent. The aromatic sulfonic acid includes one or more fluorinated alcohol groups. Also provided is a method for trimming a photoresist pattern using a trimming composition. The composition and the method thereof may provide particular applicability in manufacture of a semiconductor device.