SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device includes a first substrate, a second substrate, a plurality of through vias (TVs), and a plurality of conductive caps. The first substrate includes at least one electric component arranged thereon. The second substrate is stacked on the first substrate. The TVs penetrate the second substrate and is extended to be electrically connected to the at least one electric component of the first substrate. The conductive caps cover the TVs, respectively. The conductive caps are electrically insulated from each other. So, a short circuit can be prevented when a dielectric layer is damaged.