| 摘要 |
PROBLEM TO BE SOLVED: To provide the structure of a semiconductor device provided with a mirror of high reflectivity by utilizing a dielectric distribution Bragg reflector(D-DBR). SOLUTION: A substrate 12, an AlxGayInzN structure 18 comprising an n-type layer 18a placed in a close vicinity to the substrate, a p-type layer 18b and an active layer, a first mirror stack 14 put between the substrate and the bottom side of AlxGayInzN structure, a wafer bond interface 16 provided with a certain bonding temperature that is put between the first mirror stack 14 and a selected one out of the substrate and the AlxGayInzN structure, and p- and n-contact parts (22a and 22b) are contained. The p-contact part is electrically connected to the p-type layer, and the n-contact part is electrically connected to the n-type layer. |
