| 摘要 |
PROBLEM TO BE SOLVED: To reduce the density defect of a nitrogen compound semiconductor by epitaxially growing an amorphous nitrogen compound semiconductor layer on a substrate, and then providing a hole in the amorphous nitrogen compound semiconductor layer between the substrate and the nitrogen compound semiconductor subjected to epitaxial growth. SOLUTION: A substrate 101 is introduced into a crystal growing apparatus, and an amorphous nitrogen compound semiconductor layer 102 is formed on the substrate 101 at a temperature lower than that at which a nitrogen compound semiconductor epitaxially grows. Then, the temperature is raised to carry out crystal growth of an epitaxial film 103 of the nitrogen compound semiconductor at the growing temperature of the nitrogen compound semiconductor. After the crystal growth is terminated, the temperature is lowered and it is taken out from the crystal growing apparatus, and a hole 104 is naturally provided in the amorphous nitrogen compound semiconductor layer 102 between the substrate 101 and the nitrogen compound semiconductor subjected to epitaxial growth. |
