SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device which sufficiently inhibits reverse leakage current while allowing options of materials of a Schottky electrode and an insulation film to be broadened.SOLUTION: A semiconductor device comprises: a semiconductor layer which has a mesa structure forming a tableland shape having an upper surface and a side surface, and a peripheral surface prevailing around the mesa structure; a Schottky electrode which forms Schottky junction with the upper surface; an insulation film which is formed from the peripheral surface across the side surface to a surface of the Schottky electrode and has an opening on the Schottky electrode; and a wiring electrode which is electrically connected with the Schottky electrode inside the opening and which is formed from the inside of the opening across a portion formed on the side surface out of portions of the insulation film to a surface of a portion formed on the peripheral surface out of the portions of the insulation film.SELECTED DRAWING: Figure 1