TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A transistor and a method for manufacturing the same are provided to allow a semiconductor substrate to have the same effect to an LDD region due to positive fixed oxidization charges in a channel. CONSTITUTION: A method for manufacturing a transistor forms a gate oxide film(12) in a semiconductor substrate(11) in which a P type or a P well is provided. After a conductive layer for gate is deposited on the gate oxide film(12), the conductive layer is patterned by patterning process to form a gate electrode(13). An n type high-concentration impurity is injected into the semiconductor substrate(11) to form a source/drain(14). Positive fixed charges are charged up to the gate oxide film(12) using plasma containing NH3 or implant containing hydrogen or nitrogen. The charged-up positive fixed charges are diffused into the side surface by a thermal process so that they can overlap the gate electrode(13).