| 摘要 |
1,244,668. Semi-conductor devices. INTERNATIONAL BUSINESS MACHINES CORP. 3 Dec., 1968 [6 Dec., 1967], No. 57223/68. Heading H1K. A semi-conductor device bears an apertured insulating layer through which a first metallization makes ohmic contact with the semiconductor. A second apertured insulating layer is provided on the first insulating layer and metallization; the aperture exposes part of the first metallization, and a second metallization is provided to contact the first metallization in the second aperture and to overlap the second insulating layer. A third apertured insulating layer is provided over the second insulating layer and metallization and a third metallization is provided to contact the second metallization in the third aperture and to overlap the third insulation. In the embodiment described, such contacts are used to make connection to a planar transistor having a base region in which two double comb emitter regions are formed. Separate contacts are made to the base region and to each of the two emitter regions (which are shorted together in use by external circuitry). Each three layer contact structure is completed by a solder coating and a reflow-soldered contact ball. The first metallization of the base contact covers substantially all of the base region (and is thus interdigitated with the two double-comb emitter electrodes) and overlaps the first insulating layer to project over the collector-base junction to control its properties. A heavily doped anti-inversion ring is formed in the collector region to entirely surround the base region and this ring is provided with its own contact layers. The Specification gives details of the production of the transistor and illustrates the complex shapes of the various metallizations which differ from layer to layer. |
