| 摘要 |
1,209,782. Thin film capacitors. WESTERN ELECTRIC CO. Inc. 31 Oct., 1967 [31 Oct., 1966], No. 49352/67. Heading H1M. A thin film capacitor stable to variations in relative humidity comprises a vacuum deposited or cathode sputtered layer 12 of tantalum on a dielectric substrate 11, a dielectric layer 13 formed by anodic oxidation of the tantalum layer, a counter electrode 14 of tantalum having a density less than 16 g. per c.c., and a further dielectric layer formed by anodic oxidation of the low-density tantalum layer. The electrode layers are 1000 to 10,000 Š thick and the oxide layers at least 800 Š. The low density tantalum layer is formed by cathodic sputtering at 800 to 2500 volts and partial pressures from 10 to 100 microns mercury. |
