| 摘要 |
PURPOSE:To obtain the title high-quality graphite very close to graphite single crystal by carbonizing, under specified conditions, an aromatic polyimide film as thin as possible followed by graphitization at very high temperatures. CONSTITUTION:An aromatic polyimide film <50mum in thickness is put to temperature rise to >=900 deg.C at a mean rising rate of >200 deg.C/hr and baked to effect carbonization followed by graphitization at >=3000 deg.C. |
