| 摘要 |
A method of fabricating a transistor of a semiconductor device includes the steps of ion-implanting an n- or p- impurity in a low concentration into a silicon substrate 1 to form an impurity layer 2, sequentially forming a pad oxide layer 3 and nitride layer 4 thereon, and patterning the nitride layer 4 using a mask for a gate electrode, depositing a CVD oxide layer on the substrate and etching it to form an oxide spacer 5 on both sides of the nitride layer pattern, depositing Ti through CVD to form a Ti layer 6, carrying out heat treatment so as to form a TiSix layer 7 according to silicidation, sequentially removing the Ti layer 6 and TiSix layer 7 which are not reacted through wet etching process, sequentially removing the nitride layer 4, oxide spacer 5 and pad oxide layer 3 through wet etch, forming a gate oxide layer 8, depositing polysilicon 9 and forming the gate electrode through photolithography using the mask for the gate electrode, and ion-implanting an n+ or p+ impurity in a high concentration to form source and drain regions 10.
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