| 摘要 |
<p>The invention pertains to the programming of electrically programmable read-only memories (EPROM, EEPROM) made in the form of integrated circuits. To optimize the data programming process, two stages are planned: the first stage is a conventional but short programming stage, designed to memorize data during a relatively short period of time. In the second stage, is a longer repeat programming stage performed in a way which is internal to the integrated circuit, i.e. the data is read in the memory and re-recorded at the same places without its being necssary to apply this data again to the inputs of the integrated circuits.</p> |
