CORRECTION METHOD OF DEFECTS ON SEMICONDUCTOR MASK

摘要

A defect correcting method of semiconductor mask comprising the step sputtering gallium ion the remnant of chrome or phase inversion material unnecessarily existed between chrome patterns formed on a transparent board to remove said remnant; and the step removing the portion of the chrome pattern near gallium stain generated on the transparent board in removing said remnant by using focus beam apparatus so as not to reduce photo contrast due to said gallium stain is disclosed. Thereby, it is possible to enhance resolution, focus margin and critical dimension uniformity in photoresist process.