| 摘要 |
PURPOSE:To improve the environmental pollution resistance, heat resistance, surface hardness, wear resistance, etc. by providing a laminated structure composed of amorphous silicon and amorphous silicon nitride formed by a glow discharge decomposition method to the potoconductor layer. CONSTITUTION:An amorphous silicon nitride film contg. a doped element such as boron is formed on a substrate of glass or the like by a glow discharge decomposition method. On the film an amorphous silicon film contg. a doped elemet is formed by a similar method to obtain a potoconductor layer having a 2-layered structure. Thus, a thin electrophotographic receptor can be manufactured, the amorphous silicon nitride film is made dense to easily attain insulation, and the manufacturing yield of electrophotographic receptors is enhanced. |
