THERMAL OXIDIZATION OF POLYCIDE SUBSTRATE IN DRY OXYGEN ATMOSPHERE AND SEMICONDUCTOR CIRCUIT MANUFACTURED THEREBY

摘要

A method of thermally oxidizing polycide substrates in a dry oxygen environment as well as a MOSFET structure provided by the method are disclosed. The method includes heating a plurality of polycide substrates to temperatures greater than about 800 degrees Centigrade in a dry oxygen environment, and introducing into the environment an amount of a halogenated alkane gas sufficient to induce oxidation.