| 摘要 |
PURPOSE:To prevent the generation of cracks in a passivation film due to stress on a resin seal by using a substance, in which silicon carbide is made to be contained in aluminum, as an electrode wiring. CONSTITUTION:A substance in which silicon carbide is made to be contained in aluminum is employed as an electrode wiring. A wiring such as a metallic wiring 4 and a section such as a bonding pad section 5 connected to the wiring 4 are formed by aluminum containing 0.5wt% SiC. The wiring 4 and the bonding pad section 5 are shaped in such a manner that the fine powder of silicon carbide in approximately 10mum is dispersed uniformly into aluminum, and changed into a sputtering target through a powder sintering method, and a film is formed onto an inter-layer insulating film 3 consisting of CVD-SiO2 through a sputtering method by using said target, and patterned. Accordingly, the generation of cracks in a passivation film due to stress on a resin seal is prevented, thus obstructing the deterioration of element characteristics and damp-proofness. |
