| 摘要 |
PURPOSE:To enable a low concentration leading-in region to be formed only on one-side of adjoining part of electrode by a method wherein, when pattern etching is performed to form an electrode, the width of electrode is one-sidedly extended halfway by anisotropical etching process in the oblique direction to lead-in impurity respectively in such a state and in the state in final width. CONSTITUTION:A gate oxide film 2 is formed on a silicon substrate 1 and after depositing a gate electrode material layer 3, a resist mask 10 with almost vertical sides of formed. A temporary electrode 4a is formed by anisotropically etching the electrode material layer 3 using the mask 10 as a mask in the oblique direction around 15 deg. leaning to the vertical surface consistent with the long direction of mask 10. Later, a source 8 and a drain 9 in high concentration are formed by implanting the substrate 1 with arsenic ions in high concentration using the mask 10 and the temporary electrode 4a as masks. An extrusion part (represented by broken lines in the figure) is removed to form a gate electrode 4 and then arsenic ion is implanted in low concentration using the mask 10 and the gate electrode 4 as masks to form a low concentration leading-in region 5. After removing the mask 10, the low concentration leading-in region 5, the source 8 and the drain 9 are activated to complete a specified LDD structure.
|
